Degradation of AlGaN-based ultraviolet light emitting diodes

نویسندگان

  • S. Sawyer
  • S. L. Rumyantsev
  • M. S. Shur
چکیده

Aging the LEDs by driving at high current, results in the decrease of optical power proportional to the reciprocal square route of stress time. With aging time, change in the current–voltage characteristics indicates decrease of the current at low voltage below the light emission threshold, decrease of the forward voltage drop at high currents and usually no change in the series resistance. No change in the peak wavelength and half bandwidth were found with aging. Low frequency noise measured at low and high currents either did not depend on aging time or decreased. No correlation between noise, the device power, and the rate of the power degradation were found. These results are in strong contrast to previous studies of longer wavelength GaN-based LEDs. The possible degradation mechanism is the diffusion of the Al atoms out from the p-type cladding layer and lowering of the cladding layer potential barrier as a result. Published by Elsevier Ltd.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Graded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off

Related Articles Encapsulating light-emitting electrochemical cells for improved performance Appl. Phys. Lett. 100, 193508 (2012) Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure J. Appl. Phys. 111, 093110 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting d...

متن کامل

Application of Ultraviolet Light-Emitting Diodes to the Removal of Cefixime Trihydrate from Aqueous Solution in the Presence of Peroxydisulfate

The present research involves effectual parameters on Cefixime trihydrate removal from aqueous solutions. Antibiotics are the main contributions in pharmaceutical waste; their presence causes major concern. The extensive utilization of antibiotics in aquaculture and prescriptions has led to the cultivation of various antibiotic-resistant bacteria and genes in wastewater. The UV-LED/S2O82- pr...

متن کامل

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD)...

متن کامل

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultraviolet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanc...

متن کامل

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. A...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008